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Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa | |
Xinyu Zhang; Lidong Dai; Haiying Hu; Meiling Hong; Chuang Li | |
2022 | |
发表期刊 | Rsc Advances |
卷号 | 12期号:4页码:2454-2461 |
摘要 | A series of in situ high-pressure Raman spectroscopy and electrical conductivity experiments have been performed to investigate the vibrational and electrical transport properties of SnS 2 under non-hydrostatic and hydrostatic environments. Upon compression, an coupled structural–electronic transition in SnS 2 occurred at 30.2 GPa under non-hydrostatic conditions, which was evidenced by the splitting of the E g mode and the discontinuities in Raman shifts, Raman full width at half maximum (FWHM) and electrical conductivity. However, the coupled structural–electronic transition took place at a higher pressure of 33.4 GPa under hydrostatic conditions, which may be due to the influence of the pressure medium. Furthermore, our first-principles theoretical calculations results revealed that the bandgap energy of SnS 2 decreased slowly with increasing pressure and it closed in the pressure range of 30–40 GPa, which agreed well with our Raman spectroscopy and electrical conductivity results. Upon decompression, the recoverable Raman peaks and electrical conductivity indicated that the coupled structural–electronic transition was reversible, which was further confirmed by our HRTEM observations. |
DOI | 10.1039/D1RA08632D |
收录类别 | SCI |
语种 | 英语 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.gyig.ac.cn/handle/42920512-1/13488 |
专题 | 地球内部物质高温高压实验室 地球深部物质与流体作用地球化学研究室 |
作者单位 | 1.Key Laboratory of High-temperature and High-pressure Study of the Earth's Interior, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang, Guizhou 550081, China 2.University of Chinese Academy of Sciences, Beijing 100049, China |
推荐引用方式 GB/T 7714 | Xinyu Zhang,Lidong Dai,Haiying Hu,et al. Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa[J]. Rsc Advances,2022,12(4):2454-2461. |
APA | Xinyu Zhang,Lidong Dai,Haiying Hu,Meiling Hong,&Chuang Li.(2022).Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa.Rsc Advances,12(4),2454-2461. |
MLA | Xinyu Zhang,et al."Pressure-induced coupled structural-electronic transition in SnS2 under different hydrostatic environments up to 39.7 GPa".Rsc Advances 12.4(2022):2454-2461. |
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